2015/11/16 by Chong Li, Chunlai Xue, Li, Chong +12 · 1 citation
Computer Science · Engineering · Physics and Astronomy · #Advanced Photonic Communication Systems #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Materials Science (cond-mat.mtrl-sci) #Neural Networks and Reservoir Computing #Optics (physics.optics) #Photonic and Optical Devices #cond-mat.mtrl-sci #physics.ins-det #physics.optics
paper · pdf · doi:10.48550/arxiv.1511.05593
5pages,2figures
arxiv created 2015/11/16 · openalex publication_date 2015/11/16 · arxiv updated 2015/11/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Si/Ge uni-traveling carrier photodiodes exhibit higher output current when space-charge effects are overcome and thermal effects are suppressed, which is highly beneficial for increasing the dynamic range of various microwave photonic systems and simplifying high-bit-rate digital receivers in different applications. From the point of view of packaging, detectors with vertical-illumination configuration can be easily handled by pick-and-place tools and are a popular choice for making photo-receiver modules. However, vertical-illumination Si/Ge uni-traveling carrier (UTC) devices suffer from inter-constraint between high speed and high responsivity. Here, we report a high responsivity vertical-illumination Si/Ge UTC photodiode based on a silicon-on-insulator substrate. The maximum absorption efficiency of the devices was 2.4 times greater than the silicon substrate owing to constructive interference. The Si/Ge UTC photodiode was successfully fabricated and had a dominant responsivity at 1550 nm of 0.18 A/W, a 50% improvement even with a 25% thinner Ge absorption layer.