Simulation of Ge on Si Photodiode with photon-trapping micro-nano holes with -3dB bandwidth of >60 GHz at NIR wavelength

2024/04/09 by Ekaterina Ponizovskaya Devine, Toshishige Yamada, Devine, Ekaterina Ponizovskaya +5
Engineering · Materials Science · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Nanowire Synthesis and Applications #Optics (physics.optics) #Photonic and Optical Devices #Silicon Nanostructures and Photoluminescence

paper · pdf · doi:10.48550/arxiv.2405.05972

openalex publication_date 2024/04/09 · openalex created_date 2024/05/14 · openalex updated_date 2026/07/28

Abstract

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while the nanostructure at the bottom of the Ge layer helps to increase the optical absorption efficiency to above 80%. The BSI PD allows the PD or PD array wafer to be stacked with an electronic wafer for signal processing and transmission for optical interconnect applications such as short-reach links in data centers. Nano-microhole parameters in randomized composite formation on the bottom layer are optimized with Monte-Carlo molecular dynamics simulations incorporating charge transport to enable wide-spectral, highly efficient, and ultra-fast PDs.

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