2025/04/13 by Yifei Geng, Geng, Yifei
Physics and Astronomy · Materials Science · #GaN-based semiconductor devices and materials #Diamond and Carbon-based Materials Research #Carbon Nanotubes in Composites
paper · pdf · doi:10.48550/arxiv.2504.18548
GaN defect-based quantum emitters show significant potential for quantum information technologies, yet their intrinsic nature is not fully understood. In this work, we present results on the temperature-dependent emission polarization of GaN defect single-photon emitters integrated with solid immersion lenses. The photoluminescence (PL) remains linearly polarized over the temperature range of 10K to 300K, with a slight rotation in the polarization direction observed at intermediate temperatures. Possible mechanisms underlying this behavior are analyzed, and a roadmap for future research is outlined.