2016/10/15 by Amanuel M. Berhane, Kwang‐Yong Jeong, Berhane, Amanuel M. +19 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Diamond and Carbon-based Materials Research #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Optics (physics.optics)
paper · pdf · doi:10.48550/arxiv.1610.04692
openalex publication_date 2016/10/15 · openalex created_date 2022/10/04 · openalex updated_date 2026/07/28
Single photon emitters play a central role in many photonic quantum\ntechnologies. A promising class of single photon emitters consists of atomic\ncolor centers in wide-bandgap crystals, such as diamond silicon carbide and\nhexagonal boron nitride. However, it is currently not possible to grow these\nmaterials as sub-micron thick films on low-refractive index substrates, which\nis necessary for mature photonic integrated circuit technologies. Hence, there\nis great interest in identifying quantum emitters in technologically mature\nsemiconductors that are compatible with suitable heteroepitaxies. Here, we\ndemonstrate robust single photon emitters based on defects in gallium nitride\n(GaN), the most established and well understood semiconductor that can emit\nlight over the entire visible spectrum. We show that the emitters have\nexcellent photophysical properties including a brightness in excess of 500x103\ncounts/s. We further show that the emitters can be found in a variety of GaN\nwafers, thus offering reliable and scalable platform for further technological\ndevelopment. We propose a theoretical model to explain the origin of these\nemitters based on cubic inclusions in hexagonal gallium nitride. Our results\nconstitute a feasible path to scalable, integrated on-chip quantum technologies\nbased on GaN.\n