2025/04/29 by Lozano, Jorge Pena, Griffis, Kindred, Aimurzayev, Dimash +2
#Applied Physics (physics.app-ph) #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Materials Science (cond-mat.mtrl-sci) #Plasma Physics (physics.plasm-ph)
paper · doi:10.48550/arxiv.2504.20796
The impact semiconductor drift step recovery diodes (DSRDs) can have on high-power microwave applications make them a device of interest for future solid-state electronics. However, there is little known about their functionality and degradation under over-voltaging or high average power dissipation conditions that could therefore hinder their continual design and optimization toward better performance. The experiments on a Si seven layer DSRD conducted in the present paper allowed to broaden the understanding of its opening switching performance under over-voltaging conditions. A striking desynchronization was discovered and linked to junction and electro-neutral region damage through experiments and PSpice modelling.