1997/07/01 by K. K. Nanda, Karuna Kar Nanda, S. N. Sarangi +1
Engineering · Physics and Astronomy · #Integrated Circuits and Semiconductor Failure Analysis #Semiconductor materials and interfaces #Silicon and Solar Cell Technologies
paper · doi:10.1063/1.1148215
openalex publication_date 1997/07/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In the case of semiconductor diodes, the temperature range over which the temperature dependence of the forward voltage is linear, can be increased by lowering the operating current along with the increase of the sensitivity (dVf/dT) which is found to vary logarithmically with I. The temperature and current dependence of forward voltage Vf can be explained by using the theory of the p-n junction. The capacitance-voltage (C−V) measurements of p-n junctions are carried out at different temperatures and are discussed in light of the theory of the p-n junction. The band gap Eg, estimated from Vf−T measurement, is found to be ∼1.17 eV, whereas it is found to be 1.189 eV from C−V measurement.