Different reverse leakage current transport mechanismsof planar Schottky barrier diodes(SBDs) on Sapphire and GaN Substrate

2023/07/25 by Wang, Xiao, Lin, Zhi-Yu, Zhang, Yu-Min +2
#Applied Physics (physics.app-ph) #FOS: Physical sciences

paper · doi:10.48550/arxiv.2307.13404

Abstract

The effects of different substrates on the off state leakage current in gallium nitride planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current voltage characteristics.

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