Valley Phase Transition in Si MOSFETs

1997/07/31 by Ceyhun Bulutay, C. Bulutay, Bulutay, C. +2
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Semiconductor materials and devices #Semiconductor materials and interfaces #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.cond-mat/9707339

1 page, in REVTEX, no figures

arxiv created 1997/07/31 · openalex publication_date 1997/07/31 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We draw attention to the past literature on valley phase transition in Si(100) MOSFETs. The recent experiments performed by Kravchenko and co-workers indicating metal-insulator transition in Si MOSFETs are also in accord with the valley phase transition mechanism.

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