Metallic and insulating behaviour of the two-dimensional electron gas on a vicinal surface of Si MOSFETs

2000/03/05 by S. S. Safonov, С. С. Сафонов, Safonov, S. S. +8
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/0003060

4 pages, 4 figures

arxiv created 2000/03/05 · openalex publication_date 2000/03/05 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the insulator with dR/dT<0 to the metal with dR/dT>0 occurs at a low resistance of R_\Box^c ∼ 0.04h/e². At the low-temperature transition, which we attribute to the existence of a narrow impurity band at the interface, a distinct hysteresis in the resistance is detected. At higher temperatures, another change in the sign of dR/dT is seen and related to the crossover from the degenerate to non-degenerate 2DEG.

Related

• Metal-insulator transition in a strongly-correlated two-dimensional electron system
• Critical behavior of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFET's
• Minimum Metallic Mobility in a Two-Dimensional Electron Gas
• "Scaling of an anomalous metal/insulator transition in a 2D system in silicon at zero magnetic field"
• Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures