Critical behavior of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFET's

2000/02/28 by R. Fletcher, V. M. Pudalov, Fletcher, R. +5
Engineering · Materials Science · Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #Surface and Thin Film Phenomena #Thermal properties of materials #cond-mat.dis-nn #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/0002436

4 pages with 3 figures

arxiv created 2000/02/28 · openalex publication_date 2000/02/28 · arxiv updated 2009/11/30 · openalex created_date 2022/09/13 · openalex updated_date 2026/07/28

Abstract

This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior as a function of electron density which is very similar to that expected for an Anderson transition. In particular, when approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductivity vanishes. On the insulating side the thermopower shows an upturn with decreasing temperature.

Related

• Metallic and insulating behaviour of the two-dimensional electron gas on a vicinal surface of Si MOSFETs
• Metal-insulator transition in a strongly-correlated two-dimensional electron system
• Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures
• Metal-insulator transitions in non-crystalline systems
• Scaling Limits for the 2D Metal-Insulator Transition at B = 0 in Si-MOSFETs