Yu-Hung Liao

1. Ferroelectric HfO₂ Memory Transistors with High-κ Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles
   2021/03/16 by Ava J. Tan, Yu-Hung Liao, Tan, Ava Jiang +9 · 1 citation
   Engineering · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Semiconductor materials and devices
2. Write Disturb-Free Ferroelectric FETs With Non-Accumulative Switching Dynamics
   2022/12/01 by Michael Hoffmann, Ava Jiang Tan, Nirmaan Shanker +5 · 1 citation