Ava J. Tan

1. Ferroelectric HfO₂ Memory Transistors with High-κ Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles
   2021/03/16 by Ava J. Tan, Yu-Hung Liao, Tan, Ava Jiang +9 · 1 citation
   Engineering · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Semiconductor materials and devices