M. Holtz

1. Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates
   2004/01/27 by I. Ahmad, Iftikhar Ahmad, M. Holtz +2 · 4 citations
   Physics and Astronomy · Engineering · #GaN-based semiconductor devices and materials #Metal and Thin Film Mechanics #Silicon Carbide Semiconductor Technologies