Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates

2004/01/27 by I. Ahmad, Iftikhar Ahmad, M. Holtz +2 · 4 citations
Physics and Astronomy · Engineering · #GaN-based semiconductor devices and materials #Metal and Thin Film Mechanics #Silicon Carbide Semiconductor Technologies

paper · pdf · doi:10.1063/1.1637707

Abstract

We report measurements of stress in GaN epitaxial layers grown on 6H–SiC and α-Al2O3 substrates. Biaxial stresses span +1.0 GPa (tensile) to −1.2 GPa (compressive). Stress determined from curvature measurements, obtained using phase-shift interferometry (PSI) microscopy, compare well with measurements using accepted techniques of x-ray diffraction (XRD) and Raman spectroscopy. Correlation between XRD and Raman measurements of the E22 phonon gives a Raman-stress factor of −3.4±0.3 cm−1/GPa. We apply PSI microscopy for temperature dependent stress measurements of the GaN films. Variations found in the stress–temperature coefficient correlate well with threading dislocation densities. We develop a phenomenological model which describes the thermal stress of the epitaxial GaN as a superposition of that for ideal GaN and the free volume existing in the layers due to the threading dislocations. The model describes well the observed dependence.

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