- Nanoionic memristive phenomena in metal oxides: the valence change mechanism
2021/04/03 by Regina Dittmann, Stephan Menzel, Rainer Waser · 27 citations
Chemistry · Engineering · Materials Science · Neuroscience · #Advanced Memory and Neural Computing #Chemical physics #Chemistry #Computer science #Electrical engineering #Electrode #Electroforming #Engineering physics #Layer (electronics) #Materials science #Memristor #Nanotechnology #Neuromorphic engineering #Neuroscience and Neural Engineering #Optoelectronics #Oxide #Physics #Resistive random-access memory #Resistive touchscreen #Transition Metal Oxide Nanomaterials #Valence (chemistry) #Work function
- Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
2012/06/20 by Daniele Ielmini, F. Nardi, Federico Nardi +1 · 7 citations
Engineering · Mathematics · Neuroscience · #Advanced Memory and Neural Computing #Computer science #Electrical engineering #Electroforming #Electronic engineering #Engineering #Ferroelectric and Negative Capacitance Devices #Layer (electronics) #Materials science #Mathematics #Nanotechnology #Neuroscience and Neural Engineering #Optoelectronics #Protein filament #Reset (finance) #Resistive random-access memory #Scalability #Scaling #Set (abstract data type) #Switching time #Voltage