2025/02/11 by Sabuhi Nuruyev
#Physical Sciences and Mathematics
paper · doi:10.17605/osf.io/zay4v
This study investigate two silicon photomultipliers (SiPMs), MAPD-3NM-II and MPPC S12572-010P, which are highly sensitive light detectors used in various applications as alternatives to photomultiplier tubes (PMTs) and direct light sensors. The investigation focused on some key parameters, including breakdown voltage, temperature dependence, and capacitance. Breakdown voltage was determined using multiple methods, and temperature coefficients were analyzed through I-V characteristics at different temperatures. A significant difference was observed in capacitance: the MAPD-3NM-II exhibited a lower capacitance (155±12 pF) compared to the MPPC S12572-010P (294±26 pF), making it more suitable for applications requiring large detection areas with minimal capacitance-related performance issues. Additionally, the MAPD-3NM-II showed better thermal stability (51.32±0.44 mV/°C) compared to the MPPC S12572-010P (57.01±0.56 mV/°C). However, the MPPC S12572-010P demonstrated higher gain, which is linked to its higher capacitance. These findings contribute to a better understanding of SiPM performance and offer insights into optimizing their design for various scientific and industrial applications, including medical imaging, particle physics, and environmental monitoring.