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Characterization of silicon photomultipliers with different structures

2025/01/28 by Sabuhi Nuruyev
#Medicine and Health Sciences #Physical Sciences and Mathematics

paper · doi:10.17605/osf.io/vda5g

Abstract

Silicon Photomultipliers (SiPMs) are crucial devices in various photon-counting applications. They are mainly produced with two pixel structures, with deeply burned and surface pixel designs offering distinct advantages. This study investigates the impact of these structural differences on key parameters of two representative SiPMs: the MAPD-3NM-II (Zecotek Photonics) with a deeply burned structure and the MPPC S12572-010P (Hamamatsu Photonics) with a surface pixel structure.

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