Investigation of the etching mechanism of silicon nitride by CF4/O2/Ar gas mixture plasma in ICP

2024/12/31 by Liyue Gong, Qian Luo, Ziyan Tan +8
Engineering · #Plasma Diagnostics and Applications #Metal and Thin Film Mechanics #Semiconductor materials and devices

paper · doi:10.1016/j.vacuum.2024.114000

Citations

• Vertical sidewall of silicon nitride mask and smooth surface of etched-silicon simultaneously obtained using CHF3/O2 inductively coupled plasma