Gas-phase chemistry and etching mechanism of SiNx thin films in C4F8 + Ar inductively coupled plasma

2019/05/29 by Nomin Lim, Alexander Efremov, Kwang-Ho Kwon +1 · 22 citations
Chemistry · Engineering · #Analytical Chemistry (journal) #Chemistry #Etching (microfabrication) #Fluorocarbon #Inductively coupled plasma #Ion #Langmuir probe #Layer (electronics) #Materials science #Metal and Thin Film Mechanics #Nanotechnology #Organic chemistry #Plasma #Plasma Diagnostics and Applications #Plasma diagnostics #Plasma modeling #Reactive-ion etching #Semiconductor materials and devices #Thin film

paper · doi:10.1016/j.tsf.2019.05.066

published in Thin Solid Films 685, 97-107 (Elsevier BV)

openalex publication_date 2019/05/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Cited by

• Effect of O2 dilution and substrate temperature on the etching of SiNx in a C4F6/Ar plasma
• On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO 2 and Si x N y ) in Multi-Component Fluorocarbon Gas Mixtures. [europepmc]
• Dry Etching Performance and Gas-Phase Parameters of C 6 F 12 O + Ar Plasma in Comparison with CF 4 + Ar. [europepmc]