Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam\n epitaxy

2017/11/01 by Hanjong Paik, Paik, Hanjong, Zhen Chen +31
Engineering · Materials Science · #Advanced Materials Characterization Techniques #Diamond and Carbon-based Materials Research #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)

paper · pdf · doi:10.48550/arxiv.1711.00496

openalex publication_date 2017/11/01 · openalex created_date 2022/10/06 · openalex updated_date 2026/07/28

Abstract

Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime\nby molecular beam epitaxy, where the excess volatile SnOx desorbs from the film\nsurface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183\ncm² V^-1 s^-1 at room temperature and 400 cm² V^-1 s^-1 at 10 K, despite the\nhigh concentration (1.2x10¹1 cm^-2) of threading dislocations present. In\ncomparison to other reports, we observe a much lower concentration of (BaO)2\nRuddlesden Popper crystallographic shear faults. This suggests that in addition\nto threading dislocations that other defects possibly (BaO)2 crystallographic\nshear defects or point defects significantly reduce the electron mobility.\n

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