First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials

2023/06/01 by Si‐Chen Lee, Y. -T. Chen, Lee, S. -C. +15
Engineering · Materials Science · #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Silicon Carbide Semiconductor Technologies #Thermal properties of materials

paper · pdf · doi:10.48550/arxiv.2307.01114

openalex publication_date 2023/06/01 · openalex created_date 2023/07/05 · openalex updated_date 2026/07/28

Abstract

Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.

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