Uniaxial stress tuning of interfacial thermal conductance in cubic BAs/4H-SiC heterostructures

2025/06/14 by Zhang, Lei, Tian, Fei, Chen, Ke +2
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)

paper · doi:10.48550/arxiv.2506.12396

Abstract

Understanding interfacial thermal transport is essential for improving thermal management in high-speed power electronic devices, where the efficient removal of excess heat is a critical challenge. In this study, a machine learning interatomic potential with near first-principles accuracy was employed to investigate the interfacial thermal conductance (ITC) between [111]-oriented cubic boron arsenide (cBAs) and [0001]-oriented 4H silicon carbide (4H-SiC), as well as its dependence on uniaxial stress. Among all possible bonding configurations at the cBAs(111)/4H-SiC(0001) interface, the B-C bonded interface was identified as the most energetically favorable. Non-equilibrium molecular dynamics simulations revealed that, under ambient conditions (300 K and 0 GPa), the ITC of the B-C interface reaches 353 ± 6 MW m^-2 K^-1, and increases monotonically to 460 ± 3 MW m^-2 K^-1 under a uniaxial stress of 25 GPa perpendicular to the interface. For comparison, the As-C bonded interface exhibits a lower ITC, increasing from 233 ± 7 to 318 ± 6 MW m^-2 K^-1 over the same stress range. These results demonstrate that proper interfacial bonding and moderate uniaxial stress can significantly enhance thermal transport across the cBAs(111)/4H-SiC(0001) heterointerface, offering valuable insight for thermal design in next-generation power electronics.

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