2008/08/19 by U. Wulf, Ulrich Wulf, Wulf, U.
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.0808.2563
7 pages, 3 figures
arxiv created 2008/08/19 · openalex publication_date 2008/08/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In our previous papers on ballistic quantum transport in nano-transistors [J. Appl. Phys. 98, 84308 (2005)] it was demonstrated that under certain conditions it is possible to reduce the three-dimensional transport problem to an effectively one-dimensional one. We show that such an effectively one-dimensional description can be cast in a scale-invariant form. We obtain dimensionless variables for the characteristic channel length l and width of the transistor which determine the scale-invariant output characteristic. For l \gtrsim 10, in the strong barrier regime, the output characteristics are similar to that of a conventional MOSFET assuming an ideal form for l → ∞. In the weak barrier regime, l \lesssim 10, strong source-drain currents lead to i-v characteristics that differ qualitatively from that of a conventional transistor. Comparing with experimental data we find qualitative agreement.