Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

2018/03/21 by Ramya Cuduvally, Cuduvally, Ramya, Prathamesh Dhakras +7 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Force Microscopy Techniques and Applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures

paper · pdf · doi:10.48550/arxiv.1803.07920

openalex publication_date 2018/03/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension to a ballistic model (J. Appl. Phys. 76, 4879 (1994)) and includes transmission probability and the drain-channel coupling capacitor. The latter parameter gives rise to a theoretical RON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.

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