Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

2001/10/17 by I. Hoxha, Hoxha, I., Sergey Vitkalov +9
Computer Science · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Quantum-Dot Cellular Automata #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.cond-mat/0110331

8 pages, 6 figures

arxiv created 2001/10/17 · openalex publication_date 2001/10/17 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage V_dc is generated whenever the electron densities n_1,2 of the two metals are different, changing polarity at n₁ ≈ n₂. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.

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