Two-Parameter Scaling of Microwave Rectification vs Microwave Power at the Boundary between Two-Dimensional Electron Systems

2007/10/23 by N. Romero Kalmanovitz, I. Hoxha, Kalmanovitz, N. Romero +14
Physics and Astronomy · #FOS: Physical sciences #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #Topological Materials and Phenomena #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.0710.4298

8 pages, 8 figures

arxiv created 2007/10/23 · openalex publication_date 2007/10/23 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report measurements of the rectification of microwave radiation (0.7-20 GHz) at the boundary between two-dimensional electron systems separated by a narrow gap on a silicon surface for different temperatures, electron densities and microwave power. For frequencies above 4 GHz and different temperatures, the rectified voltage V_dc as a function of microwave power P can be scaled onto a single universal curve V*_dc=f*(P*). The scaled voltage is a linear function of power, V*_dc ~ P* for small power and proportional to P*^1/2 at higher power. A theory is proposed that attributes the rectification to the thermoelectric response due to strong local overheating by the microwave radiation at the boundary between two dissimilar 2D metals. Excellent agreement is obtained between theory and experiment.

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