2011/11/21 by I.M. Dildar, I. M. Dildar, D. B. Boltje +13
Engineering · Materials Science · Physics and Astronomy · #Advanced Materials Characterization Techniques #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1111.5047
3 pages, 5 figures
arxiv created 2011/11/21 · openalex publication_date 2011/11/21 · arxiv updated 2011/11/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission Electron Microscopy shows atomically sharp and continuous interfaces while EELS measurements show some slight intermixing. The elemental ratio of La to Al measured by EDX is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by Pulsed Laser Deposition because of the different interplay between stoichiometry, mixing and oxygen vacancies.