2008/09/05 by M. Huijben, Mark Huijben, Huijben, M. +14 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Advanced Materials Characterization Techniques #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Semiconductor materials and devices #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.0809.1068
46 pages, 16 figures, to be published as progress report in Advanced Materials
arxiv created 2008/09/05 · openalex publication_date 2008/09/05 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A large variety of transport properties have been observed at the interface between the insulating oxides SrTiO3 and LaAlO3 such as insulation, 2D interface metallicity, 3D bulk metallicity, Kondo scattering, magnetism and superconductivity. The relation between the structure and the properties of the SrTiO3-LaAlO3 interface can be explained in a meaningful way by taking into account the relative contribution of three structural aspects: oxygen vacancies, structural deformations (including cation disorder) and electronic interface reconstruction. The emerging phase diagram is much richer than for related bulk oxides due to the occurrence of interface electronic reconstruction. The observation of this interface phenomenon is a display of recent advances in thin film deposition and characterization techniques, and provides an extension to the range of exceptional electronic properties of complex oxides.