Modified exponential I(U) dependence and optical efficiency of AlGaAs SCH lasers in computer modeling with Synopsys TCAD

2011/07/23 by Z. Kozioł, Koziol, Zbigniew, S. I. Matyukhin +1 · 1 citation
Physics and Astronomy · Engineering · Chemistry · #Semiconductor Quantum Structures and Devices #Semiconductor Lasers and Optical Devices #Spectroscopy and Laser Applications

paper · pdf · doi:10.48550/arxiv.1107.4668

Abstract

Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. We propose a modified exponential I-V dependence to describe electrical properties. A simple analytical, phenomenological model is found to describe optical efficiency, η, with a high accuracy, by using two parameters only. A link is shown between differential electrical resistivity r=dU/dI just above the lasing offset voltage, and the functional η(U) dependence.

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