2011/06/13 by Z. Kozioł, Koziol, Z., S. I. Matyukhin +1
Engineering · Physics and Astronomy · #Computational Physics (physics.comp-ph) #FOS: Physical sciences #Optics (physics.optics) #Quantum and electron transport phenomena #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.1106.2501
openalex publication_date 2011/06/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD and open source software for semi-automatic data analysis of large collections of data. The effects of doping in all laser layers are investigated with the aim to achieve optimal characteristics of the devise. The results are compared with these obtained for real lasers produced at Polyus research institute in Moscow, showing that a significant improvement can be achieved, in particular an increase in optical efficiency (up to over 70 %) by careful control of type and level of doping through out the entire structure.