2017/03/31 by Cassandra Chua, Chua, Cassandra, Arseniy Lartsev +22
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.1703.10848
openalex publication_date 2017/03/31 · openalex created_date 2022/10/04 · openalex updated_date 2026/07/28
We study electron transport in nanostructures patterned in bilayer graphene\npatches grown epitaxially on SiC as a function of doping, magnetic field, and\ntemperature. Away from charge neutrality transport is only weakly modulated by\nchanges in carrier concentration induced by a local side-gate. At low n-type\ndoping close to charge neutrality, electron transport resembles that in\nexfoliated graphene nanoribbons and is well described by tunnelling of single\nelectrons through a network of Coulomb-blockaded islands. Under the influence\nof an external magnetic field, Coulomb blockade resonances fluctuate around an\naverage energy and the gap shrinks as a function of magnetic field. At charge\nneutrality, however, conduction is less insensitive to external magnetic\nfields. In this regime we also observe a stronger suppression of the\nconductance below T^*, which we interpret as a sign of broken interlayer\nsymmetry or strong fluctuations in the edge/potential disorder.\n