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The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC

2015/02/06 by Tom Yager, Arseniy Lartsev, Yager, Tom +8
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #FOS: Physical sciences #Graphene and Nanomaterials Applications #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1502.02013

arxiv created 2015/02/06 · openalex publication_date 2015/02/06 · arxiv updated 2015/02/09 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on Silicon Carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer- size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content.

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