2014/09/15 by Parijat Sengupta, Hoon Ryu, Sengupta, Parijat +7
Materials Science · Physics and Astronomy · #Chemical and Physical Properties of Materials #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Topological Materials and Phenomena
paper · pdf · doi:10.48550/arxiv.1409.4376
openalex publication_date 2014/09/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The k.p perturbation method for determination of electronic structure first pioneered by Kohn and Luttinger continues to provide valuable insight to several band structure features. This method has been adopted to heterostructures confined up to three directions. In this paper, numerical details of setting up a k.p Hamiltonian using the finite difference approximation for such confined nanostructures is explicitly demonstrated. Nanostructures belonging to two symmetry classes namely cubic zincblende and rhombohedral crystals are considered. Rhombohedral crystals, of late, have gained prominence as candidates for the recently discovered topological insulator (TI) class of materials. Lastly the incorporation of strain field to the k.p Hamiltonian and matrix equations for computing the intrinsic and externally applied strain in heterostructures within a continuum approximation is shown. Two applications are considered 1)Computation of the eigen states of a multi-million zincblende InAs quantum dot with a stress-reducing InGaAs layer of varying Indium composition embedded in a GaAs matrix and 2)Dispersion of a rhombohedral topological insulator Bi2Se3 film.