2014/07/21 by Parijat Sengupta, Sunhee Lee, Sengupta, Parijat +7
Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.1407.5420
openalex publication_date 2014/07/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A multiscale approach was adopted for the calculation of confined states in\nself-assembled semiconductor quantum dots (QDs). While results close to\nexperimental data have been obtained with a combination of atomistic strain and\ntight-binding (TB) electronic structure description for the confined quantum\nstates in the QD, the TB calculation requires substantial computational\nresources. To alleviate this problem an integrated approach was adopted to\ncompute the energy states from a continuum 8-band k.p Hamiltonian under the\ninfluence of an atomistic strain field. Such multi-scale simulations yield a\nroughly six-fold faster simulation. Atomic-resolution strain is added to the\nk.p Hamiltonian through interpolation onto a coarser continuum grid. Sufficient\nnumerical accuracy is obtained by the multi-scale approach. Optical transition\nwavelengths are within 7% of the corresponding TB results with a proper\nsplitting of p-type sub-bands. The systematically lower emission wavelengths in\nk.p are attributable to an underestimation of the coupling between the\nconduction and valence bands.\n