2016/06/24 by Hanno Kroencke, Agnieszka Gocalińska, Kroencke, Hanno +7
Engineering · Materials Science · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Advancements in Semiconductor Devices and Circuit Design #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.1606.07671
openalex publication_date 2016/06/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
GaSb/InAs/GaSb layer stacks have been grown on InAs metamorphic substrates\n(pseudosubstrates) by MOVPE, using nitrogen as major carrier gas. We\ndemonstrate that GaSb growth by nitrogen MOVPE on InAs metamorphic substrates\n(and on InAs wafers) is possible in a very narrow range of growth parameters.\nAs demonstrators, GaSb/InAs/GaSb structures were grown for electron mobility\ntests, obtaining (unintentional) 2D electron gas densities in the order of\n9/5x10e12 cm(e-2) and mobilities up to 1.2/1.8x10e4 cm(e2)/Vs at room and\nliquid nitrogen temperature respectively. We show that it is beneficial to have\nsome hydrogen in the carrier gas mixture for GaSb growth to achieve good\ncrystal quality, morphology and electrical properties. Furthermore, an\nunexpected and previously unreported decomposition process of GaSb is observed\nat relatively low growth temperatures under the supply of the precursors for\nInAs epitaxial overgrowth. This nevertheless gets suppressed at even lower\ngrowth temperatures.\n