2009/05/07 by Ignacio Gutiérrez Lezama, I. Gutiérrez Lezama, Alberto F. Morpurgo +3
Computer Science · Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mechanical and Optical Resonators #Neural Networks and Reservoir Computing #Other Condensed Matter (cond-mat.other) #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.48550/arxiv.0905.1067
4 pages, 4 figures
openalex publication_date 2009/05/07 · arxiv created 2009/07/14 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space-charge transferred from the contacts, and can be modeled quantitatively without free fitting parameters, using Poisson's equation, and by assuming that the density of states in rubrene is that of a conventional inorganic semiconductor. Our results demonstrate the consistency, at the quantitative level, of a variety of recent experiments on rubrene crystals, and show how the use of FET measurements can enable the determination of microscopic parameters (e.g., the effective mass of charge carriers).