A review on single photon sources in silicon carbide

2017/01/31 by A Lohrmann, Alexander Lohrmann, Brett C. Johnson +5 · 251 citations
Engineering · Materials Science · #Coherence (philosophical gambling strategy) #Diamond and Carbon-based Materials Research #Engineering physics #Integrated Circuits and Semiconductor Failure Analysis #Ion-surface interactions and analysis #Materials science #Nanotechnology #Open quantum system #Optics #Optoelectronics #Photon #Physics #Quantum #Quantum computer #Quantum entanglement #Quantum information science #Quantum mechanics #Quantum technology #Silicon #Silicon carbide

paper · open access · doi:10.1088/1361-6633/aa5171

published in Reports on Progress in Physics 80(3), 034502 (IOP Publishing)

openalex publication_date 2017/01/31 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

Citations

• Magnetometry with nitrogen-vacancy defects in diamond
• The Physical Implementation of Quantum Computation

Cited by

• Characterizing Defect Dynamics in Silicon Carbide Using Symmetry-Adapted Collective Variables and Machine Learning Interatomic Potentials
• High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC
• Characterisation of commercial SiC MOSFETs at deep-cryogenic temperatures
• Identification of defects responsible for optically detected magnetic resonance in hexagonal boron nitride
• A Concise Primer on Solid-State Quantum Emitters
• Slit-loaded coplanar waveguide for color-center spin qubits
• Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
• Nanomaterials for Quantum Information Science and Engineering
• Bright room temperature single photon source at telecom range in cubic silicon carbide. [europepmc]
• On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays. [europepmc]
• Advances in diamond nanofabrication for ultrasensitive devices. [europepmc]
• An efficient Terahertz rectifier on the graphene/SiC materials platform. [europepmc]
• Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide. [europepmc]
• Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars. [europepmc]
• Vanadium spin qubits as telecom quantum emitters in silicon carbide. [europepmc]
• Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin-photon interface. [europepmc]
• Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors. [europepmc]
• A reaction-coordinate perspective of magnetic relaxation. [europepmc]
• Robust coherent control of solid-state spin qubits using anti-Stokes excitation. [europepmc]
• Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines. [europepmc]
• Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P-I-N Diodes: Combining Theory and Experiment. [europepmc]
• Optimisation of Lapping Process Parameters for Single-Crystal 4H-SiC Using Orthogonal Experiments and Grey Relational Analysis. [europepmc]
• Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications. [europepmc]
• Density functionals with asymptotic-potential corrections are required for the simulation of spectroscopic properties of materials. [europepmc]
• Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature. [europepmc]
• Engineering the formation of spin-defects from first principles. [europepmc]
• A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics. [europepmc]
• Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas. [europepmc]
• Degeneracy-breaking and long-lived multimode microwave electromechanical systems enabled by cubic silicon-carbide membrane crystals. [europepmc]
• Heteroepitaxial 3C-SiC for MEMS Applications. [europepmc]
• Certified quantum randomness within purity constraints. [europepmc]

Related

• Efficiently Engineered Room Temperature Single Photons in Silicon Carbide
• Coherent control of single spins in silicon carbide at room temperature
• Deterministic and Scalable Coupling of Single 4H-SiC Spin Defects into Bullseye Cavities
• Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering
• Quantum communication networks with defects in silicon carbide