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High-mobility, wet-transferred graphene grown by chemical vapor deposition

2019/04/02 by Domenico De Fazio, David G. Purdie, De Fazio, D. +25 · 3 citations
Materials Science · #2D Materials and Applications #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Thermal properties of materials

paper · pdf · doi:10.48550/arxiv.1904.01405

openalex publication_date 2019/04/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to∼70000cm2 V-1 s-1 at room temperature and∼120000cm2 V-1 s-1 at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities∼30000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above 10000cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.

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