2017/01/21 by Hadi Arjmandi‐Tash, Arjmandi-Tash, Hadi, Dipankar Kalita +21
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Thermal properties of materials
paper · pdf · doi:10.48550/arxiv.1701.06057
openalex publication_date 2017/01/21 · openalex created_date 2017/02/03 · openalex updated_date 2026/07/28
We present a transfer-free preparation method for graphene on hexagonal boron nitride (h-BN) crystals by chemical vapor deposition of graphene via a catalytic proximity effect, i.e. activated by a Cu catalyst close-by . We demonstrate the full coverage by monolayer graphene of half-millimeter-sized hexagonal boron nitride crystals exfoliated on a copper foil prior to growth. We demonstrate that the proximity of the copper catalyst ensures high yield with the growth rate estimated between of 2μm/min to 5μm/min . Optical and electron microscopies together with confocal micro-Raman mapping confirm that graphene covers the top surface of h-BN crystals that we attribute to be a lateral growth from the supporting catalytic copper substrate. Structural and electron transport characterization of the in-situ grown graphene present an electronic mobility of about 20, 000cm2/(V.s). Comparison with graphene/h-BN stacks obtained by manual transferring of similar CVD graphene onto h-BN, confirms the better neutrality reached by the self-assembled structures.