2024/08/20 by Saleh Ahmed Khan, Khan, Saleh Ahmed, Sudipto Saha +5 · 1 citation
Engineering · Materials Science · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ga2O3 and related materials #Semiconductor materials and devices #Silicon Nanostructures and Photoluminescence
paper · pdf · doi:10.48550/arxiv.2408.11028
openalex publication_date 2024/08/20 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A systematic investigation of the electrical characteristics of \beta-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad resulted in a significant decrease in on-current and an increase in on-resistance compared to the pre-radiation condition, likely due to the generation of radiation-induced deep-level acceptor traps. However, upon exposure to higher gamma radiation doses of 3 and 5 Mrad, partial recovery of the device performance occurred, attributed to a radiation annealing effect. The capacitance-voltage (C-V) characterization revealed that the net carrier concentration in the β-Ga2O3 drift layer reduced from ∼3.19 × 1016 cm-3 to ∼3.05 × 1016 cm-3 after 5 Mrad (Si) irradiation. Temperature-dependent I-V characteristics showed that irradiation leads to a reduction in both forward and reverse current across all investigated temperatures ranging from 25 to 250^∘C, accompanied by slight increases in on-resistance, ideality factors, and Schottky barrier heights. The reverse breakdown characteristics of the β-Ga2O3 SBDs showed a slight increase of the breakdown voltage after radiation. Overall, β-Ga2O3 Schottky diode exhibits high resilience to gamma irradiation, with performance degradation mitigated by radiation-induced self-recovery, highlighting its potential for radiation-hardened electronic applications in extreme environments.