2026/01/01 by Zhengliang Zhang, Jianli Liu, Yiping Xiao +8
Engineering · Materials Science · Physics and Astronomy · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Photocathodes and Microchannel Plates
paper · doi:10.1109/tns.2026.3666502
crossref issued 2026/01/01 · crossref published 2026/01/01 · crossref published-print 2026/01/01 · openalex publication_date 2026/01/01 · crossref created 2026/02/20 · openalex created_date 2026/02/21 · crossref deposited 2026/02/23 · crossref indexed 2026/07/29 · openalex updated_date 2026/07/30
This work investigates the synergistic radiation effects of β-Ga2O3Schottky barrier diodes (SBDs) under 300 MeV proton and 143 MeV Argon (Ar) heavy ion irradiation. Following 300 MeV proton irradiation, we observed an increase in reverse leakage current, a reduction in the Schottky barrier height, and a decrease in forward conduction current in the β-Ga2O3SBDs. The Deep Level Transient Spectroscopy (DLTS) measurements revealed the emergence of new interface traps (E2, E3) and an increase in the concentration of bulk traps (E2*) after proton irradiation, which are likely the primary contributors to the degradation of SBD performance. In subsequent heavy ion irradiation experiments, SBD previously subjected to proton irradiation experienced single-event burnout (SEB) at a bias of −100 V. At the same time, non-proton irradiated SBDs exhibited SEB at −180 V. These results indicate that cumulative radiation effects significantly enhance the probability of single event burnout, underscoring the challenges to the reliability of β- Ga2O3SBDs in space environments.