2015/10/09 by Tsuneya Ando · 16 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Bilayer #Bilayer graphene #Born approximation #Chemistry #Condensed matter physics #Conductivity #Electric field #Electrical resistivity and conductivity #Gaussian #Graphene #Graphene research and applications #Hall conductivity #Hall effect #Impurity #Magnetic field #Materials science #Membrane #Nanotechnology #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Scattering
paper · doi:10.7566/jpsj.84.114704
published in Journal of the Physical Society of Japan 84(11), 114704 (Physical Society of Japan)
openalex publication_date 2015/10/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/13
The valley Hall conductivity, having opposite signs between the K and K′ valleys, is calculated in disordered bilayer graphene in the presence of gate electric field. Numerical calculations are performed within a self-consistent Born approximation for scatterers with Gaussian potential and for charged impurities. The results show that the valley Hall conductivity is much enhanced as compared to that in the ideal case without scatterers, remains appreciable in the presence of large disorder, and exhibits double-peak structure near zero energy.