2016/08/12 by Fangfang Song, Song, Fangfang, B. E. White +1
Materials Science · #FOS: Physical sciences #Ga2O3 and related materials #Materials Science (cond-mat.mtrl-sci) #Transition Metal Oxide Nanomaterials
paper · pdf · doi:10.48550/arxiv.1608.03911
openalex publication_date 2016/08/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In this work, the results of fabricating ultra thin VO2 films on the technologically relevant amorphous SiO2 surface using reactive DC magnetron sputtering are presented. Results indicate that a post deposition anneal in low partial pressures of oxygen is an effective way at stabilizing the VO2(M1) phase on the SiO2 surface. VO2 films with a thickness of 42nm show a continuous microstructure, and undergo a resistivity change of more than a factor of 200 as the temperature of the film increases above 72oC. The film shows hysteresis in the metal-insulator transition temperature upon heating and cooling with a width of approximately 8oC. The resistivity of the low temperature semiconducting phase is found to be thermally activated with an activation energy 0.16±0.03 ev. Stress measurements using X-ray diffraction indicate that the ultra thin VO2 film has a large tensile stress of 2.0±0.2 GPa. This value agrees well with the calculated thermal stress due to differential thermal expansion between the VO2 thin film and silicon substrate. The stress leads to a shift of the metal-insulator transition temperature by approximately 4oC.