2016/08/11 by Fangfang Song, Song, Fangfang, B. E. White +1
Engineering · Materials Science · #Advanced Memory and Neural Computing #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Transition Metal Oxide Nanomaterials #ZnO doping and properties
paper · pdf · doi:10.48550/arxiv.1608.03378
openalex publication_date 2016/08/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO2 films grown on Si/SiO2 substrate. Experimental results suggest that electrons are the predominant carrier both in the semiconducting and metallic phases. The decrease of the resistivity with increasing temperature is mainly caused by the increase in the number density of charge carriers. The temperature dependence of the carrier concentration indicates the VO2 films has a band gap of 0.40±0.09 ev in the semiconducting phase. Analysis of hall effect data based on a composite cube model suggests that the sample has some untransitional phase with a length that is 1/4 of the grains.