Simulation of ion-implanted boron redistribution under different conditions of the transient enhanced diffusion suppression

2011/06/23 by О. И. Величко, Velichko, O. I., A. P. Kavaliova +1
Engineering · Physics and Astronomy · #Silicon and Solar Cell Technologies #Semiconductor materials and interfaces #Ion-surface interactions and analysis

paper · pdf · doi:10.48550/arxiv.1106.4845

Abstract

It has been shown by means of impurity diffusion simulation that ion-implanted boron redistribution at the annealing temperatures 800^∘C and lower is governed by the long-range migration of nonequilibrium impurity interstitials regardless of the methods used for the transient enhanced diffusion suppression. The relative amounts of impurity atoms, which are being transferred to the transient interstitial position, have been determined and time-average migration lengths of nonequilibrium boron interstitials have been obtained.

Related

• Simulation of interstitial diffusion of ion-implanted boron
• Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression
• Different shapes of impurity concentration profiles formed by long-range interstitial migration
• Change in the microscopic diffusion mechanisms of boron implanted into silicon with increase in the annealing temperature
• Interstitial diffusion of ion-implanted boron in crystalline silicon