Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression

2011/06/17 by О. И. Величко, Velichko, O. I., Hundorina, A. A. +1
Engineering · Physics and Astronomy · #FOS: Physical sciences #Ion-surface interactions and analysis #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces #Silicon and Solar Cell Technologies

paper · pdf · doi:10.48550/arxiv.1106.3423

openalex publication_date 2011/06/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

It has been shown that during thermal treatments of silicon layers preamorphized by germanium implantation and then implanted with boron ions the transport of impurity atoms occurs right up to a temperature of 850^∘C due to migration of the nonequilibrium boron interstitials.

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• Simulation of ion-implanted boron redistribution under different conditions of the transient enhanced diffusion suppression
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