2020/07/07 by Andrés Gómez, José Manuel Vila‐Fungueiriño, Gomez, Andrés +19
Engineering · Materials Science · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #Ferroelectric and Piezoelectric Materials #Materials Science (cond-mat.mtrl-sci) #Multiferroics and related materials
paper · pdf · doi:10.48550/arxiv.2007.03452
openalex publication_date 2020/07/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Ferroelectric oxides have attracted much attention due to their wide range of\napplications, especially in electronic devices such as nonvolatile memories and\ntunnel junctions. As a result, the monolithic integration of these materials\ninto silicon technology and its nanostructuration to develop alternative\ncost-effective processes are among the central points in current technology. In\nthis work, we used a chemical route to obtain nanowire thin films of a novel\nSr1+\δMn8O16 (SMO) hollandite-type manganese oxide on silicon. Scanning\ntransmission electron microscopy combined with crystallographic computing\nreveals a crystal structure comprising hollandite and pyrolusite units sharing\nthe edges of their MnO6 octahedra, resulting in three types of tunnels arranged\nalong the c axis, where ordering of the Sr atoms produces a natural symmetry\nbreaking. The novel structure gives rise to a ferroelectricity and\npiezoelectricity, as revealed by local Direct Piezoelectric Force Microscopy\nmeasurements, which confirmed the ferroelectric nature of SMO nanowire thin\nfilms at room temperature and showed a piezoelectric coefficient d33 value of\n22,6 pC/N. Moreover, we proved that flexible vertical SMO nanowires can be\nharvested and converted into electric output energy through the piezoelectric\neffect, showing an excellent deformability and high interface recombination.\nThis work indicates the possibility of engineering the integration of 1D\nmanganese oxides on silicon, a step which precedes the production of\nmicroelectronic devices.\n