A strategy for fabricating micro-scale freestanding single-crystalline complex oxide device arrays

2024/08/19 by Huandong Chen, Chen, Huandong, Yang Liu +7
Engineering · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Lasers and Optical Devices

paper · pdf · doi:10.48550/arxiv.2408.10071

openalex publication_date 2024/08/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We present a general fabrication strategy for freestanding single-crystalline complex oxide device arrays via wet chemical etching-based microfabrication processes and epitaxial lift-off. Here, we used 0.5Ba(Zr_0.2Ti_0.8)O₃-0.5Ba(Zr_0.7Ti_0.3)O₃ (BCZT) as a model relaxor ferroelectric oxide system and La_0.7Sr_0.3MnO₃ as the sacrificial layer for demonstration. Arrays of SrRuO₃ (SRO) / BCZT / SRO ferroelectric capacitor mesas were first defined and isolated on the growth wafer, and then they were released using epitaxial lift-off with lithography-defined surrounding etching holes, after which the freestanding device arrays were integrated onto a glass substrate. Our proposed strategy sheds light on preparing various freestanding single-crystalline oxide devices and paves the way for their heterogeneous integration onto arbitrary substates.

Related

• Selective epitaxial growth of submicron complex oxide structures by amorphous SrTiO3
• Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films
• High-throughput combinatorial approach expedites the synthesis of a lead-free relaxor ferroelectric system
• Ferroelectric metal-oxide-semiconductor capacitors using ultrathin single crystalline SrZrxTi1-xO3
• Band-gap engineering at a semiconductor - crystalline oxide interface