2021/08/23 by С. И. Лазарев, Luca Gelisio, Lazarev, Sergey +25
Engineering · Physics and Astronomy · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Metal and Thin Film Mechanics
paper · pdf · doi:10.48550/arxiv.2108.10173
openalex publication_date 2021/08/23 · openalex created_date 2022/07/25 · openalex updated_date 2026/07/28
Semiconductor nanowires (NWs) have a broad range of applications for nano-\nand optoelectronics. The strain field of gallium nitride (GaN) NWs could be\nsignificantly changed when contacts are applied to them to form a final device,\nespecially considering the piezoelectric properties of GaN. Investigation of\ninfluence of the metallic contacts on the structure of the NWs is of high\nimportance for their applications in real devices. We have studied a series of\ndifferent type of contacts and influence of the applied voltage bias on the\ncontacted GaN NWs with the length of about 3 to 4 micrometers and with two\ndifferent diameters of 200 nm and 350 nm. It was demonstrated that the NWs with\nthe diameter of 200 nm are bend already by the interaction with the substrate.\nFor all GaN NWs, significant structural changes were revealed after the\ncontacts deposition. The results of our research may contribute to the future\noptoelectronic applications of the GaN nanowires.\n