2019/04/23 by J. Schwandt, Schwandt, Joern, E. Fretwurst +9
Physics and Astronomy · Engineering · #Particle Detector Development and Performance #Advancements in Semiconductor Devices and Circuit Design #Integrated Circuits and Semiconductor Failure Analysis
paper · pdf · doi:10.48550/arxiv.1904.10234
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the\nexpected position of the innermost pixel detector layer of the CMS and ATLAS\nexperiments, the estimated equivalent neutron fluence after 3000 fb-1 is\n2\⋅1016 neq/cm2, and the IEL (Ionizing Energy Loss) dose in\nthe SiO2 12 MGy. The optimisation of the pixel sensors and the understanding\nof their performance as a function of fluence and dose makes a radiation damage\nmodel for TCAD simulations, which describes the available experimental data,\nhighly desirable. The currently available bulk-damage models are not able to\ndescribe simultaneously the measurements of dark current (I-V),\ncapacitance-voltage (C-V) and charge collection efficiency (CCE) of pad diodes\nfor fluences \≥ 1\⋅ 1015 neq/cm2. Therefore, for the\ndevelopment and validation of a new accurate bulk damage model we use I-V, C-V\nand CCE measurements on pad diodes available within the CMS-HPK campaign and\ndata from samples irradiated recently with 24 GeV/c protons. For the\ndetermination of the radiation-induced damage parameters we utilise the\n"optimiser" of Synopsys TCAD, which allows the minimisation of the difference\nbetween the measured and simulated I-V, C-V and CCE. The outcome of this\noptimisation, the Hamburg Penta Trap Model (HPTM), provides a consistent and\naccurate description of the measurements of diodes irradiated with protons in\nthe fluence range from 3\⋅1014 neq/cm2 to 1.3\⋅1016\nneq/cm2.\n